ArF Immersion Photoresist (193 nm)
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Resumen
ArF Immersion Photoresist (193 nm) for advanced semiconductor manufacturing.
Número CAS
N/A
Fórmula Molecular
N/A
Product Grade
SEMI
Apariencia
liquid
Formas de entrega
Canister Drum
Descripción del Producto
ArF Immersion Photoresist (193 nm) is a high-precision chemical used in the photolithography process of semiconductor fabrication. It is specifically designed for use with ArF (Argon Fluoride) lasers at 193 nm wavelength, enabling the production of extremely fine patterns on silicon wafers. This photoresist is crucial for achieving smaller feature sizes and higher resolution in the electronics and semiconductor industry. Its key properties include excellent sensitivity, resolution, and etch resistance, making it ideal for advanced nodes in chip manufacturing.
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